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PD - 94005B
Advanced Process Technology Dynamic dv/dt Rating l 175C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Description
l l Fifth Generation HEXFET (R) Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF630NL) is available for lowprofile application.
IRF630N IRF630NS IRF630NL
HEXFET(R) Power MOSFET
D
VDSS = 200V RDS(on) = 0.30
G S
ID = 9.3A
TO-220AB IRF630N
D2Pak IRF630NS
TO-262 IRF630NL
Absolute Maximum Ratings
Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew
Max.
9.3 6.5 37 82 0.5 20 94 9.3 8.2 8.1 -55 to +175 300 (1.6mm from case ) 10 lbf*in (1.1N*m)
Units
A W W/C V mJ A mJ V/ns C
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1
10/08/04
IRF630N/S/L
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
Min. 200 --- --- 2.0 4.9 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- ---
Typ. --- 0.26 --- --- --- --- --- --- --- --- --- --- 7.9 14 27 15
Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 0.30 VGS = 10V, ID = 5.4A 4.0 V VDS = VGS, ID = 250A --- S VDS = 50V, ID = 5.4A 25 VDS = 200V, VGS = 0V A 250 VDS = 160V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V 35 ID = 5.4A 6.5 nC VDS = 160V 17 VGS = 10V --- VDD = 100V --- ID = 5.4A ns --- RG = 13 --- RD = 18 D Between lead, 4.5 --- 6mm (0.25in.) nH G from package 7.5 --- and center of die contact S 575 --- VGS = 0V 89 --- VDS = 25V 25 --- pF = 1.0MHz
Source-Drain Ratings and Characteristics
IS
ISM
VSD trr Qrr ton
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min. Typ. Max. Units
Conditions D MOSFET symbol --- --- 9.3 showing the A G integral reverse --- --- 37 S p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 5.4A, VGS = 0V --- 117 176 ns TJ = 25C, IF = 5.4A --- 542 813 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Thermal Resistance
Parameter
RJC RCS RJA RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Junction-to-Ambient (PCB mount)
Typ.
--- 0.50 --- ---
Max.
1.83 --- 62 40
Units
C/W
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2
IRF630N/S/L
100
I D , Drain-to-Source Current (A)
10
I D , Drain-to-Source Current (A)
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
100
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
10
1
4.5V
4.5V
1
0.1
0.01 0.1
20s PULSE WIDTH TJ = 25 C
1 10 100
0.1 0.1
20s PULSE WIDTH TJ = 175 C
1 10 100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
RDS(on) , Drain-to-Source On Resistance (Normalized)
100
3.5 3.0 2.5 2.0 1.5 1.0 0.5
ID = 9.3A
I D , Drain-to-Source Current (A)
10
TJ = 175 C
1
TJ = 25 C
0.1 4.0
V DS = 50V 20s PULSE WIDTH 5.0 6.0 7.0 8.0 9.0 10.0
0.0 -60 -40 -20 0
VGS = 10V
20 40 60 80 100 120 140 160 180
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRF630N/S/L
1200
1000
Crss = C gd Coss = C + C ds gd
VGS , Gate-to-Source Voltage (V)
VGS = 0V, f = 1 MHZ Ciss = C + C , C SHORTED gs gd ds
16
ID = 5.4A V DS= 160V V DS= 100V V DS= 40V
12
C, Capacitance(pF)
800
Ciss
600
8
Coss
400
4
200
Crss
0 1 10 100 1000
0
0
5
10
15
20
25
30
VDS, Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
100
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY RDS(on)
10
ID , Drain Current (A)
100 10us 10 100us
TJ = 175 C TJ = 25 C
1
1
1ms
0.1 0.2
V GS = 0 V
0.4 0.6 0.8 1.0 1.2
0.1
TC = 25 C TJ = 175 C Single Pulse
1 10 100
10ms
1000
VSD ,Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
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IRF630N/S/L
12 12
VDS VGS RG
RD
D.U.T.
+ V DD
ID , Drain Current (A) ID , Drain Current (A)
9
9
-
10V
6
Pulse Width 1 s Duty Factor 0.1 %
6
Fig 10a. Switching Time Test Circuit
3
3
VDS 90%
0
0 25 25
50 50 T
TC CCase Temperature ( C) ,
75 100 125 150 75 125 150 , Case100 Temperature ( C)
175 175
10% VGS
td(on) tr t d(off) tf
Fig 9. Maximum Drain Current Vs. Case Temperature
10
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
1 D = 0.50 0.20 0.10 0.05 0.1 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1
0.01 0.00001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRF630N/S/L
EAS , Single Pulse Avalanche Energy (mJ)
200
15V
ID 2.2A 3.8A BOTTOM 5.4A TOP
VDS
L
DRIVER
150
RG
20V
D.U.T
IAS tp
+ V - DD
A
100
0.01
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS tp
50
0
25
50
75
100
125
150
175
Starting TJ , Junction Temperature ( C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
10 V
QGS VG QGD
VGS
3mA
D.U.T.
+ V - DS
IG
ID
Charge
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
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IRF630N/S/L
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
-
+
RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
+ VDD
Driver Gate Drive P.W. Period D=
P.W. Period VGS=10V
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
VDD
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET(R) Power MOSFETs
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IRF630N/S/L
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
2.87 (.113) 2.62 (.103)
10.54 (.415) 10.29 (.405)
3.78 (.149) 3.54 (.139) -A6.47 (.255) 6.10 (.240)
-B4.69 (.185) 4.20 (.165) 1.32 (.052) 1.22 (.048)
4 15.24 (.600) 14.84 (.584)
1.15 (.045) MIN 1 2 3
LEAD ASSIGNMENTS HEXFET GATE 11234LEAD ASSIGNMENTS
IGBTs, CoPACK 1234GATE COLLECTOR EMITTER COLLECTOR
14.09 (.555) 13.47 (.530)
2GATE DRAIN 3DRAINSOURCE SOURCE 4 - DRAIN DRAIN
4.06 (.160) 3.55 (.140)
3X 3X 1.40 (.055) 1.15 (.045)
0.93 (.037) 0.69 (.027) M BAM
3X
0.55 (.022) 0.46 (.018)
0.36 (.014)
2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH
2.92 (.115) 2.64 (.104)
3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
TO-220AB Part Marking Information
E XAMPLE : T HIS IS AN IR F 1010 L OT CODE 1789 AS S E MB LE D ON WW 19, 1997 IN T HE AS S E MB LY LINE "C" INT E R NAT IONAL R E CT IF IE R LOGO AS S E MB L Y LOT CODE PAR T NU MB E R
Note: "P" in assembly line position indicates "Lead-Free"
DAT E CODE YE AR 7 = 1997 WE E K 19 L INE C
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IRF630N/S/L
D2Pak Package Outline
Dimensions are shown in millimeters (inches)
D2Pak Part Marking Information
T HIS IS AN IR F530S WITH L OT CODE 8024 AS S EMBL ED ON WW 02, 2000 IN T HE AS S EMBL Y L INE "L" Note: "P" in as sembly line pos ition indicates "L ead-Free" INTE RNAT IONAL RE CT IFIER LOGO AS S E MBLY L OT CODE PART NU MBER F 530S DAT E CODE YEAR 0 = 2000 WEE K 02 L INE L
OR
INT ERNAT IONAL RECT IF IER LOGO AS S EMB LY L OT CODE PART NUMB ER F 530S DAT E CODE P = DES IGNAT ES LEAD-F REE PRODUCT (OPT IONAL) YEAR 0 = 2000 WEEK 02 A = AS S EMB LY S IT E CODE
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IRF630N/S/L
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
TO-262 Part Marking Information
E XAMPLE : T HIS IS AN IRL3103L LOT CODE 1789 AS S E MBLE D ON WW 19, 1997 IN T HE AS S E MB LY LINE "C" Note: "P" in as s embly line pos ition indicates "Lead-F ree" INT E RNAT IONAL RE CT IF IE R LOGO AS S E MB LY LOT CODE PART NUMB E R
DAT E CODE YE AR 7 = 1997 WE E K 19 LINE C
OR
INT E RNAT IONAL RE CT IF IER LOGO AS S EMB LY LOT CODE PART NUMB ER DAT E CODE P = DE S IGNAT E S LE AD-F REE PRODUCT (OPT IONAL) YE AR 7 = 1997 WE E K 19 A = AS S EMB LY S IT E CODE
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IRF630N/S/L
D2Pak Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153)
1.60 (.063) 1.50 (.059) 0.368 (.0145) 0.342 (.0135)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
11.60 (.457) 11.40 (.449)
15.42 (.609) 15.22 (.601)
24.30 (.957) 23.90 (.941)
TRL
10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 16.10 (.634) 15.90 (.626) 4.72 (.136) 4.52 (.178)
FEED DIRECTION
13.50 (.532) 12.80 (.504)
27.40 (1.079) 23.90 (.941)
4
330.00 (14.173) MAX.
60.00 (2.362) MIN.
Notes:
NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039) 24.40 (.961) 3
30.40 (1.197) MAX. 4
Repetitive rating; pulse width limited by
max. junction temperature.
Pulse width 400s; duty cycle 2%. This is only applied to TO-220AB package.
Starting TJ = 25C, L = 6.5mH
RG = 25, IAS = 5.4A.
This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
ISD 5.4A, di/dt 280A/s, VDD V(BR)DSS, TJ 175C.
TO-220AB package is not recommended for Surface Mount Application.
Data and specifications subject to change without notice. This product has been designed and qualified for the automotive [Q101] (IRF630N) & industrial market (IRF630NS/L). Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 10/04
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